Learn more opens in new window or tab seller information knightselectrocom it also comes with tracking to major destinations. Tip3055d tip3055 npn, tip2955 pnp complementary silicon power transistors designed for general. Second soldering 260 c stresses exceeding those listed in the maximum ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Max unit collector cutoff current i cbo vcb 35 v, ie 0 0. Nov 27, 2018 bf transistor datasheet pdf, bf equivalent. Unit test conditions collector to base breakdown voltage vbrcbo 30 v ic100. Description npn epitaxial planar typefor rf power amplifiers on hf band mobile radio applications. Silicon npn power transistors 2sc19 2sc19a description with to220 package complement to type 2sa99a large collector power dissipation high vceo applications audio frequency high power driver pinning pin description 1 base collector.
Irf510 epub download nchannel v a tc 43w tc through hole toab. Discrete rd16hhf1 rohs compliance, silicon mosfet power transistor 30mhz,16w publicationdate. Free technical support if something goes wrong, we will be ready and willing to help. Idss zero gate voltage drain current vds17v, vgs0v 10 ua. Toshiba transistor silicon pnp triple diffused type 2sa1987. Orders are usually shipped out of our warehouse within one business day. May 06, 2020 fs10sm datasheet pdf fs10sma datasheet, fs10sma circuit, fs10sma data sheet. Parameter symbol value unit collectoremitter voltage vce 1200 v dc collector current, limited by tvjmax tc 25. Inchange semiconductor isc product specification isc silicon npn power transistor 2sc1969 description high power gain. The gain of the 2sc2078b will be in the range from 25 to 50, 2sc2078c ranges from 40 to 80, 2sc2078d ranges from 60 to 120, 2sc2078e ranges from 100 to 200. Inchange semiconductorisc product specificationisc silicon npn power transistor2sc1969descriptionhigh power gain.
Max unit collector cutoff current i cbo vcb 150 v, ie 0. Irf datasheet, irf mosfet nchannel transistor datasheet, buy irf transistor. Toshiba transistor silicon npn epitaxial type pct process. Storage temperature range tstg 55150 c electrical characteristics ta 25c characteristics symbol test condition min typ. Mitsubishi npn epitaxial planar typefor rf power amplifiers on hf band mobile radio applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Absolute maximum ratings tc 25c characteristics symbol rating unit. Max unit collector cutoff current i cbo vcb 240 v, ie 0. Hg semiconductors hg rf power transistor rohs compliance,silicon npn power transistor. Nte235 silicon npn transistor final rf power output description.
Elektronische bauelemente npn plastic encapsulated transistor. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min typ max unit test condition collector to base breakdown voltage vbrcbo 80 v ic0. Isc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Nte235 silicon npn transistor final rf power output. The nte235 is an npn silicon transistor in a to220 type case designed for use in high power output. The 2sc2078 transistor might have a current gain anywhere between 25 and 200. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min. Discrete rd16hhf1 rohs compliance, silicon mosfet power transistor 30mhz,16w description rd16hhf1 is a mos fet type transistor specifically designed for hf rf power amplifiers applications. The strw6754 is a quasiresonant topology ic designed for. Silicon npn power transistors 2sc3157 description with to220 package high switching speed low collector saturation voltage complement to type 2sa1261 applications for high voltage,high speed and power switching applications pinning pin description 1base 2 collector 3 emitter absolute maximum ratingsta25. Unit dc current gain hfe note 1 v ce 10 v, ic 20 ma 40 200. Mitsubishi, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Although the greatest care has been taken while compiling these documents, we cannot guarantee that the instructions will work on every radio presented. A, ie0 collector to emitter breakdown voltage vbrceo 25 v ic10ma, ib0. Toshiba transistor silicon pnp epitaxial type 2sa1837. Mitsubishi highspeed switching use,alldatasheet, datasheet, datasheet. Electrical characteristics tc25c, unless otherwise noted limits unit symbol parameter conditions min typ max. Npn epitaxial planar typefor rf power amplifiers on hf band mobile radio applications, 2sc1969 datasheet, 2sc1969 circuit, 2sc1969 data sheet. Ecopack specifications, grade definitions and product status are available at. Storage temperature t stg 40 to 125 c channel temperature t ch 150 c 1refer to figure 2 2i dmax is the drain current determined by the drive voltage of the ic and the threshold voltage, vth, of the mosfet 3refer to figure 3 4refer to figure 5 not recommended for new designs.
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